The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Nov. 05, 2018
Applicant:
Renesas Electronics America Inc., Milpitas, CA (US);
Inventor:
Peter John Mole, St. Albans, GB;
Assignee:
Renesas Electronics America Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 3/158 (2006.01); G05F 1/46 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H02M 3/158 (2013.01);
Abstract
One or more embodiments enable both a fixed bandgap reference voltage and a variable reference voltage to be generated and stored on a capacitor. According to certain aspects, the present embodiments use an additional storage capacitor of smaller size to reduce the sub-threshold leakage of an isolating FET switches at high temperatures. Among other aspects, this enables a more efficient use of chip area for reducing sub-threshold induced leakage than simply increasing the storage capacitor when precision storage is required.