The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Sep. 22, 2018
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Cheng Meng, Xiamen, CN;

Chun-Yi Wu, Xiamen, CN;

Shufan Yang, Xiamen, CN;

Duxiang Wang, Xiamen, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/38 (2013.01); H01L 33/387 (2013.01); H01L 33/405 (2013.01); H01L 33/30 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method of fabricating an LED includes: providing an epitaxial structure having a growth substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer; forming an extended electrode and performing thermal treatment to form ohmic contact with the second-type semiconductor layer; providing a temporary substrate bonded with the epitaxial structure, and removing the growth substrate to expose the surface of the first-type semiconductor layer; forming an ohmic contact layer, a mirror layer and a bonding layer over the exposed surface of the first-type semiconductor layer; providing a conductive substrate bonded with the bonding layer, and removing the temporary substrate to expose part of the surface of the second-type semiconductor layer and the extended electrode; forming a roughening surface via etching of the exposed second-type semiconductor layer; and providing a bonding wire electrode forming a closed loop with the extended electrode.


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