The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Sep. 04, 2017
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Werner Bergbauer, Windberg, DE;

Joachim Hertkorn, Wörth an der Donau, DE;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/025 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01); H01S 5/3407 (2013.01); H01S 5/3408 (2013.01); H01S 5/34333 (2013.01); H01S 5/2009 (2013.01); H01S 5/3425 (2013.01);
Abstract

In an embodiment a semiconductor layer sequence includes a pre-barrier layer including AlGaN, a pre-quantum well including InGaN having a first band gap, a multi-quantum well structure including a plurality of alternating main quantum wells of InGaN having a second band gap and main barrier layers of AlGaN or AlInGaN, wherein the second band gap is smaller than the first band gap and the main quantum wells are configured to generate a radiation having a wavelength of maximum intensity between 365 nm and 490 nm inclusive, a post-quantum well with a third band gap which is larger than the second band gap, a post-barrier layer including AlGaN or AlInGaN and an electron-blocking layer including AlGaN.


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