The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

May. 03, 2018
Applicant:

University of New Hampshire, Durham, NH (US);

Inventor:

David S. Lashmore, Lebanon, NH (US);

Assignee:

University of New Hampshire, Durham, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/036 (2006.01); H01L 31/0687 (2012.01); C01B 35/14 (2006.01); H01L 31/032 (2006.01); H01L 31/0352 (2006.01); H01L 31/048 (2014.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/0687 (2013.01); C01B 35/14 (2013.01); H01L 31/032 (2013.01); H01L 31/036 (2013.01); H01L 31/035227 (2013.01); H01L 31/048 (2013.01); B82Y 30/00 (2013.01); C01P 2002/52 (2013.01); C01P 2004/13 (2013.01); C01P 2006/40 (2013.01); Y02E 10/544 (2013.01);
Abstract

Solar cells fabricated from p-n junctions of boron nitride nanotubes alloyed with carbon are described. Band gaps of boron nitride carbon alloys are tailored by controlling carbon content in the boron nitride nanotubes. High efficiency solar cells can be fabricated by tailoring the band gap of boron nitride carbon alloy nanotubes, and using these nanotubes for fabricating solar cells u. Because boron nitride carbon alloy nanotubes are transparent to most wavelengths of light, the wavelengths not converted to electrons (i.e., absorbed) at a first p-n junction in a solar cell will pass through the stack to another p-n junction in the stack having a different band gap. At each successive p-n junction, each of which has a different band gap from the other p-n junctions in the stack, more wavelengths of light will be converted into electricity. This dramatically increases the efficiency of solar cells.


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