The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Dec. 17, 2018
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Indo Chung, Seoul, KR;

Seunghwan Shim, Seoul, KR;

Ilhyoung Jung, Seoul, KR;

Jeongbeom Nam, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022433 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/022441 (2013.01); H01L 31/0682 (2013.01); H01L 31/0747 (2013.01); H01L 31/1804 (2013.01); H01L 31/1868 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

Discussed is a solar cell includes a semiconductor substrate, a conductive type region including a first conductive type region and a second conductive type region formed on one surface of the semiconductor substrate, an electrode including a first electrode and a second electrode, wherein the first electrode is connected to the first conductive type region and the second electrode is connected to the second conductive type region, and a passivation layer formed on the conductive type region. The passivation layer includes at least one of silicon nitride and silicon carbide.


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