The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Jan. 07, 2019
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Hiroaki Yamashita, Hakusan Ishikawa, JP;
Syotaro Ono, Kanazawa Ishikawa, JP;
Hisao Ichijo, Kanazawa Ishikawa, JP;
Hideto Sugawara, Nonoichi Ishikawa, JP;
Hiroshi Ohta, Kanazawa Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor body, first and second electrodes, and a control electrode. The semiconductor body includes first to fourth semiconductor layers. The first electrode is provided on a front surface of the semiconductor body. The second electrode is provided on a back surface of the semiconductor body. The control electrode is provided between the semiconductor body and the first electrode. The second semiconductor layer is positioned between a portion and other portion of the first semiconductor layer in a first direction directed along the front surface. The third semiconductor layer contacts the portion of first semiconductor layer and the second semiconductor layer. The third semiconductor layer includes a first end portion positioned in the portion of the first semiconductor layer and a second end portion positioned in the second semiconductor layer. The fourth semiconductor layer is selectively provided in the second end portion.