The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Jan. 22, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Steven M. Shank, Jericho, VT (US);
Cameron Luce, Colchester, VT (US);
Pernell Dongmo, Essex Junction, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 21/76 (2006.01); H01L 21/02 (2006.01); H01L 21/764 (2006.01); H01L 21/3065 (2006.01); H01L 21/762 (2006.01); H01L 21/308 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/3065 (2013.01); H01L 21/764 (2013.01); H01L 21/76224 (2013.01); H01L 29/0688 (2013.01); H01L 29/0847 (2013.01); H01L 29/66568 (2013.01); H01L 29/78 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/76829 (2013.01); H01L 29/4991 (2013.01);
Abstract
Structures that integrate airgaps with a field-effect transistor and methods for forming a field-effect transistor with integrated airgaps. A first semiconductor layer is formed on a substrate, and a second semiconductor layer is formed over the first semiconductor layer. A source/drain region of a field-effect transistor is formed in the second semiconductor layer. An airgap is located in the first semiconductor layer, The airgap is arranged in a vertical direction between the source/drain region and the substrate.