The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Oct. 07, 2016
Applicant:

Tohoku University, Miyagi, JP;

Inventors:

Shigetoshi Sugawa, Miyagi, JP;

Rihito Kuroda, Miyagi, JP;

Shunichi Wakashima, Miyagi, JP;

Assignee:

Tohoku University, Miyagi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H01L 27/146 (2006.01); H01L 29/78 (2006.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 29/7833 (2013.01); H04N 5/378 (2013.01); H04N 5/37455 (2013.01); H04N 5/37457 (2013.01);
Abstract

One of the problems addressed by the present invention is to provide an optical sensor, a solid-state imaging device, and a signal readout method therefor that greatly contribute to a further development of industry and to the realization of a more secure and safe society. One of the solutions provided by the present invention is an optical sensor comprising a light reception element, a storage capacitor for storing charges, and a transfer switch for transferring, to the storage capacitor, a charge generated by light input into the light reception element. The storage capacitor includes a floating diffusion capacitor and a lateral overflow integration capacitor. The transfer switch is an LDD-MOS transistor of which a drain area has a specific impurity concentration.


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