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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10720428 B1

PDFFull Text
Date of Patent:
Jul. 21, 2020

Filed:

Sep. 27, 2016

High bandgap schottky contact layer device

Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Corey A. Nevers, Hillsboro, OR (US);

Sheila K. Hurtt, Portland, OR (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:

Withrow & Terranova, P.L.L.C.

Primary Examiner:

Matthew C Landau

Assistant Examiner:

Mark Hatzilambrou

Int. Cl.
CPC ...
H01L 21/8252 (2006.01); H01L 29/778 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 27/095 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0883 (2013.01); H01L 21/8252 (2013.01); H01L 27/0605 (2013.01); H01L 27/095 (2013.01); H01L 29/66462 (2013.01); H01L 29/7785 (2013.01); H01L 29/0657 (2013.01); H01L 29/42316 (2013.01);
Abstract

A high bandgap Schottky contact layer device and methods for producing same are provided herein. According to one aspect, a high bandgap Schottky contact layer device comprises a substrate, a first Schottky layer over the substrate, the first Schottky layer having a first bandgap, and a second Schottky layer over the first Schottky layer, the second Schottky layer having a second bandgap. The device further comprises a first metal contact over the second Schottky layer and at least one ohmic contact, a portion of which being in direct contact with the substrate. The first bandgap is greater than 1.7 electronvolts (eV). In one embodiment, the second bandgap is also greater than 1.7 eV.

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