The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Nov. 13, 2018
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Yoshiaki Toyoda, Matsumoto, JP;
Hideaki Katakura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
In a circuit portion, a p-type diffusion region penetrates, in the depth direction, an n-type base region on the front side of a base substrate and surrounds a MOSFET. In a protective element portion on the same substrate, a p-type contact region, an n-type diffusion region, and a p-type diffusion region are selectively provided in a p-type diffusion region on the front side of the base substrate. The p-type diffusion region penetrates the p-type diffusion region in the depth direction, on the outer periphery of the p-type diffusion region. An n-type source region, the p-type diffusion region, the p-type contact region, and the n-type diffusion region are connected to a GND terminal. The rear surface of the substrate is connected to a VCC terminal. A snapback start voltage of a parasitic bipolar element of the protective element portion is lower than that of the circuit portion.