The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Sep. 12, 2017
Applicant:

Hitachi Automotive Systems, Ltd., Hitachinaka-shi, Ibaraki, JP;

Inventors:

Yoshimitsu Yanagawa, Tokyo, JP;

Yoshikazu Nara, Tokyo, JP;

Masahiro Matsumoto, Tokyo, JP;

Hiroshi Nakano, Tokyo, JP;

Akira Kotabe, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 49/02 (2006.01); H01L 27/08 (2006.01); H01L 27/10 (2006.01); H03K 3/011 (2006.01); H03K 3/354 (2006.01); H03K 4/52 (2006.01); H03B 5/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/01 (2013.01); H01L 27/0802 (2013.01); H01L 27/101 (2013.01); H01L 28/20 (2013.01); H03B 5/24 (2013.01); H03K 3/011 (2013.01); H03K 3/354 (2013.01); H03K 4/52 (2013.01);
Abstract

A resistance circuit is configured such that a P-type resistance section and an N-type resistance section are electrically connected in series, the P-type resistance section is configured with P-type diffusion layer resistance elements that are disposed to form a right angle with respect to each other and that are electrically connected in series, and the N-type resistance section is configured with N-type diffusion layer resistance elements that are disposed to form the right angle with respect to each other and that are electrically connected in series. Furthermore, the P-type diffusion layer resistance element is disposed along a <100> orientation direction of a semiconductor substrate, and the N-type diffusion layer resistance element is disposed along a <110> orientation direction of the semiconductor substrate. It is thereby possible to provide the resistance circuit, an oscillation circuit, and an in-vehicle sensor apparatus that reduce stress-induced characteristic fluctuations.


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