The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Jul. 31, 2018
Fuji Electric Co., Ltd., Kawasaki, JP;
Tomonori Mizushima, Matsumoto, JP;
Yusuke Kobayashi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device includes: a first-conductivity-type drift layer including a first-conductivity-type impurity, vacancy-oxygen-hydrogen complex defects each caused by a vacancy, an oxygen atom, and a hydrogen atom, divacancy-and-vacancy-phosphorus complex defects, having a trap density level lower than a trap density level of the vacancy-oxygen-hydrogen complex defect, and third complex defects; a plurality of donor layers provided at different depths in a depth direction of the first-conductivity-type drift layer, wherein each of the plurality of donor layers includes donors caused by the vacancy-oxygen-hydrogen complex defects, and each of the plurality of donor layers has an impurity concentration distribution that includes a first portion with a maximum impurity concentration and a second portion with a concentration gradient in which the impurity concentration is reduced from the first portion to both main surfaces of the first-conductivity-type drift layer; and a second-conductivity-type semiconductor region provided on one main surface of the first-conductivity-type drift layer.