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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10720325 B1

PDFFull Text
Date of Patent:
Jul. 21, 2020

Filed:

Jan. 22, 2018

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Takafumi Nitta, Toyama, JP;

Yushin Takasawa, Toyama, JP;

Satoshi Shimamoto, Toyama, JP;

Hiroki Yamashita, Toyama, JP;

Assignee:

Kokusai Electric Corporation, Tokyo, JP;

Attorney:

Edell, Shapiro & Finnan, LLC

Primary Examiner:

Maliheh Malek

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/52 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/401 (2013.01); C23C 16/45527 (2013.01); C23C 16/45531 (2013.01); C23C 16/52 (2013.01); H01L 21/02129 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02277 (2013.01);
Abstract

Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.

Find Patent Forward Citations

Nitta, Takafumi. (2020). Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium (U.S. Patent No. 10720325). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10720325

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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