The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Apr. 17, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Yoshihiko Kamata, Yokohama Kanagawa, JP;

Yoko Deguchi, Yokohama Kanagawa, JP;

Takuyo Kodama, Sagamihara Kanagawa, JP;

Tsukasa Kobayashi, Tokyo, JP;

Mario Sako, Yokohama Kanagawa, JP;

Kosuke Yanagidaira, Fujisawa Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/32 (2013.01);
Abstract

A semiconductor memory device includes a memory cell, a bit line connected to the memory cell, a sense amplifier connected to the memory cell through the bit line, and a control circuit. The sense amplifier includes a sense node connected to the bit line, a first capacitive element connected to the sense node and a sense transistor having a gate connected to the sense node. The control circuit is configured to adjust a voltage applied to a back gate of the sense transistor or a source of the sense transistor to correct a variation of a threshold voltage of the sense transistor.


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