The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Dec. 05, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Hyun Kook Park, Anyang-si, KR;
Young Hoon Oh, Hwaseong-si, KR;
Chi Weon Yoon, Seoul, KR;
Yong Jun Lee, Hwaseong-si, KR;
Chea Ouk Lim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A resistive memory element or device includes: a first, main, memory cell area including a plurality of first resistive memory cells; and a second, buffer, memory cell area including a plurality of second resistive memory cells. The first resistive memory cells of the main memory cell area are configured to store data therein, and the second resistive memory cells of the buffer memory cell area are configured to temporarily store portions of the data therein for at least a stabilization time period while the portions of the data stabilize in the main memory cell area.