The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Sep. 13, 2018
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventor:

Mark Andrew Shaw, Milan, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/822 (2006.01); G02B 6/122 (2006.01); G02B 6/25 (2006.01); G02B 6/12 (2006.01); B23K 26/0622 (2014.01); G02B 6/13 (2006.01);
U.S. Cl.
CPC ...
G02B 6/122 (2013.01); B23K 26/0624 (2015.10); G02B 6/12004 (2013.01); G02B 6/13 (2013.01); G02B 6/25 (2013.01); H01L 21/67092 (2013.01); H01L 21/822 (2013.01); G02B 2006/12166 (2013.01);
Abstract

A method includes providing a semiconductor wafer that includes at least one optical waveguide extending in a longitudinal direction. Stealth dicing laser processing is applied to the semiconductor wafer by producing defect regions into the wafer along at least one cutting line. The cutting line is oblique to the longitudinal direction of the at least one optical waveguide. The wafer is expanded to induce fracture thereof at the at least one cutting line, thereby producing an end surface of the at least one optical waveguide. The end surface is oblique to the longitudinal direction of the at least one optical waveguide.


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