The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jul. 17, 2019
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Satoshi Seo, Kanagawa, JP;

Nobuharu Ohsawa, Kanagawa, JP;

Shunsuke Hosoumi, Kanagawa, JP;

Takahiro Ishisone, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5016 (2013.01); H01L 51/5012 (2013.01); H01L 2251/552 (2013.01);
Abstract

A light-emitting element having high emission efficiency which includes a fluorescent material as a light-emitting substance is provided. A light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a light-emitting layer. The light-emitting layer includes a host material and a guest material. The host material has a difference of more than 0 eV and less than or equal to 0.2 eV between a singlet excitation energy level and a triplet excitation energy level. The guest material is capable of emitting fluorescence. The triplet excitation energy level of the host material is higher than a triplet excitation energy level of the guest material.


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