The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jan. 11, 2019
Applicant:
Fujifilm Corporation, Minato-ku, Tokyo, JP;
Inventors:
Keeyoung Park, Shizuoka, JP;
Atsushi Mizutani, Shizuoka, JP;
Assignee:
FUJIFILM CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 43/08 (2006.01); H01L 27/105 (2006.01); C23F 1/40 (2006.01); C23F 4/00 (2006.01); C23F 1/30 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); C23F 1/30 (2013.01); C23F 1/40 (2013.01); C23F 4/00 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 27/105 (2013.01); H01L 43/08 (2013.01);
Abstract
An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.