The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jun. 21, 2018
Applicant:

Alliance for Sustainable Energy, Llc, Golden, CO (US);

Inventors:

William Michael Nemeth, Wheat Ridge, CO (US);

Pauls Stradins, Golden, CO (US);

Vincenzo Anthony LaSalvia, Conifer, CO (US);

Matthew Robert Page, Littleton, CO (US);

David Levi Young, Golden, CO (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/077 (2012.01); H01L 31/068 (2012.01); H01L 31/0745 (2012.01);
U.S. Cl.
CPC ...
H01L 31/182 (2013.01); H01L 31/022441 (2013.01); H01L 31/022458 (2013.01); H01L 31/0682 (2013.01); H01L 31/077 (2013.01); H01L 31/0745 (2013.01); H01L 31/1804 (2013.01); H01L 31/1872 (2013.01);
Abstract

Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.


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