The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jan. 25, 2017
Applicant:
University-industry Cooperation Group of Kyung Hee University, Yongin-si, Gyeonggi-do, KR;
Inventors:
Assignee:
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0384 (2006.01); H01L 31/048 (2014.01); B82Y 30/00 (2011.01); H01L 31/074 (2012.01); H01L 31/18 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/074 (2013.01); H01L 31/022425 (2013.01); H01L 31/022466 (2013.01); H01L 31/0384 (2013.01); H01L 31/048 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); Y02E 10/50 (2013.01);
Abstract
Disclosed are a solar cell and a method of manufacturing the same. The solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the present disclosure includes a hybrid structure including a silicon quantum dot layer, in which a silicon oxide layer includes a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure.