The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jan. 24, 2017
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Takuma Fuyuki, Itami, JP;

Suguru Arikata, Itami, JP;

Susumu Yoshimoto, Itami, JP;

Katsushi Akita, Itami, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01); H01L 21/00 (2006.01); H01L 31/0352 (2006.01); H01L 31/0304 (2006.01); H01L 31/103 (2006.01); H01L 21/02 (2006.01); H01L 31/101 (2006.01); H01L 31/18 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 21/0237 (2013.01); H01L 21/02387 (2013.01); H01L 21/02505 (2013.01); H01L 31/0304 (2013.01); H01L 31/03042 (2013.01); H01L 31/03046 (2013.01); H01L 31/035209 (2013.01); H01L 31/101 (2013.01); H01L 31/103 (2013.01); H01L 31/1844 (2013.01); B82Y 20/00 (2013.01);
Abstract

A semiconductor stacked body includes: a first semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a first conductivity type; a quantum-well light-receiving layer containing a group III-V compound semiconductor; a second semiconductor layer containing a group III-V compound semiconductor; and a third semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a second conductivity type. The first semiconductor layer, the quantum-well light-receiving layer, the second semiconductor layer, and the third semiconductor layer are stacked in this order. The concentration of an impurity that generates a carrier of the second conductivity type is 1×10cmor more and 1×10cmor less in the second semiconductor layer.


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