The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Sep. 05, 2018
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Nobuyoshi Saito, Tokyo, JP;
Tomomasa Ueda, Yokohama Kanagawa, JP;
Kentaro Miura, Kawasaki Kanagawa, JP;
Keiji Ikeda, Kawasaki Kanagawa, JP;
Tsutomu Tezuka, Yokohama Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a transistor includes first to third conductors, first and second oxide semiconductors, and a gate insulating film. The first and second conductors are stacked via an insulator above a substrate. The first oxide semiconductor is formed on the first conductor. The second oxide semiconductor is formed on the first oxide semiconductor. The second oxide semiconductor have a pillar shape through the second conductor along a first direction crossing a surface of the substrate. The second oxide semiconductor is different from the first oxide semiconductor. The gate insulating film is formed between the second conductor and the second oxide semiconductor. The third conductor is formed on the second oxide semiconductor.