The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Aug. 18, 2017
Applicant:
Ahmad Houssam Tarakji, Sacramento, CA (US);
Inventor:
Ahmad Houssam Tarakji, Sacramento, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78615 (2013.01); H01L 27/1203 (2013.01); H01L 29/78612 (2013.01); H01L 29/78618 (2013.01); H01L 29/78639 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01);
Abstract
Device architectures for a Silicon-On-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistor (SOI-MOSFET) were defined. They incorporated configurations of Body-Tied-Source that drastically increased the conductance that an Impact-Ionizations current sees from the body of an SOI-MOSFET. This consequently permitted the SOI-MOSFET to effectively operate at far higher operating biases.
Tarakji, Ahmad. (2020). Approach for an area-efficient and scalable cmos performance based on advanced silicon-on-insulator (soi), silicon-on-sapphire (sos) and silicon-on-nothing (son) technologies (U.S. Patent No. 10714623). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10714623
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile