The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jan. 26, 2017
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Ryo Arasawa, Isehara, JP;

Hideaki Shishido, Atsugi, JP;

Shunpei Yamazaki, Setagaya, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); H01L 29/786 (2006.01); G09G 3/36 (2006.01); H01L 27/12 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 29/24 (2006.01); H01L 29/49 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78609 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/134336 (2013.01); G02F 1/136286 (2013.01); G09G 3/3614 (2013.01); G09G 3/3648 (2013.01); G09G 3/3677 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/24 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); G02F 1/13624 (2013.01); G02F 1/133345 (2013.01); G02F 1/136213 (2013.01); G02F 2001/134345 (2013.01); G02F 2201/123 (2013.01); G02F 2201/40 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0439 (2013.01); G09G 2300/0465 (2013.01);
Abstract

A liquid crystal display device is provided in which the aperture ratio can be increased in a pixel including a thin film transistor in which an oxide semiconductor is used. In the liquid crystal display device, the thin film transistor including a gate electrode, a gate insulating layer and an oxide semiconductor layer which are provided so as to overlap with the gate electrode, and a source electrode and a drain electrode which overlap part of the oxide semiconductor layer is provided between a signal line and a pixel electrode which are provided in a pixel portion. The off-current of the thin film transistor is 1×10A or less. A potential can be held only by a liquid crystal capacitor, without a capacitor which is parallel to a liquid crystal element, and a capacitor connected to the pixel electrode is not formed in the pixel portion.


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