The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jul. 09, 2019
Denso Corporation, Kariya, Aichi-pref., JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Yuichi Takeuchi, Kariya, JP;
Atsuya Akiba, Kariya, JP;
Sachiko Aoi, Nagakute, JP;
Katsumi Suzuki, Nagakute, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
A silicon carbide semiconductor device includes: a vertical semiconductor element, which includes: a semiconductor substrate made of silicon carbide and having a high impurity concentration layer on a back side and a drift layer on a front side; a base region made of silicon carbide on the drift layer; a source region arranged on the base region and made of silicon carbide; a deep layer disposed deeper than the base region; a trench gate structure including a gate insulation film arranged on an inner wall of a gate trench which is arranged deeper than the base region and shallower than the deep layer, and a gate electrode disposed on the gate insulation film; a source electrode electrically connected to the base region, the source region, and the deep layer; and a drain electrode electrically connected to the high impurity concentration layer.