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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10714610 B1

PDFFull Text
Date of Patent:
Jul. 14, 2020

Filed:

Aug. 27, 2018

Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Tatsuo Shimizu, Shinagawa, JP;

Ryosuke Iijima, Setagaya, JP;

Toshihide Ito, Shibuya, JP;

Shunsuke Asaba, Kawasaki, JP;

Yukio Nakabayashi, Yokohama, JP;

Shigeto Fukatsu, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Earl N Taylor

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/167 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/739 (2006.01); B66B 11/04 (2006.01); H01L 29/16 (2006.01); B61C 3/00 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/45 (2006.01); H02M 7/537 (2006.01); H02P 27/06 (2006.01); B60R 16/023 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); B66B 11/043 (2013.01); H01L 21/046 (2013.01); H01L 21/049 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 29/7395 (2013.01); H01L 29/7813 (2013.01); B60R 16/023 (2013.01); B61C 3/00 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02609 (2013.01); H01L 21/02634 (2013.01); H01L 21/02664 (2013.01); H01L 29/0804 (2013.01); H01L 29/086 (2013.01); H01L 29/0821 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/45 (2013.01); H01L 29/4916 (2013.01); H01L 29/66333 (2013.01); H02M 7/537 (2013.01); H02P 27/06 (2013.01);
Abstract

A semiconductor device of an embodiment includes a silicon carbide layer; a gate electrode; a gate insulating layer disposed between the silicon carbide layer and the gate electrode; a first region disposed in the silicon carbide layer and containing nitrogen (N); and a second region disposed between the first region and the gate insulating layer, and containing at least one element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), hydrogen (H), deuterium (D), and fluorine (F).

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