logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10714605 B1

PDFFull Text
Date of Patent:
Jul. 14, 2020

Filed:

Dec. 12, 2018

Highly scaled linear gan hemt structures

Applicant:

Hrl Laboratories, Llc, Malibu, CA (US);

Inventors:

Jeong-Sun Moon, Moorpark, CA (US);

Andrea Corrion, Oak Park, CA (US);

Joel C. Wong, Simi Valley, CA (US);

Adam J. Williams, Los Alamitos, CA (US);

Assignee:

HRL Laboratories, LLC, Malibu, CA (US);

Attorney:

Ladas & Parry

Primary Examiner:

Mark V Prenty

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/201 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 21/0254 (2013.01); H01L 29/1029 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/41775 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/0843 (2013.01);
Abstract

A transistor includes a substrate, a channel layer coupled to the substrate, a source electrode coupled to the channel layer, a drain electrode coupled to the channel layer, and a gate electrode coupled to the channel layer between the source electrode and the drain electrode. The gate electrode has a length dimension of less than 50 nanometers near the channel layer, and the channel layer includes at least a first GaN layer and a first graded AlGaN layer on the first GaN layer.

Find Patent Forward Citations

Moon, Jeong-Sun. (2020). Highly scaled linear gan hemt structures (U.S. Patent No. 10714605). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10714605

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…