The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Aug. 03, 2018
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventor:
Jean-Pierre Colinge, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/441 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 29/24 (2006.01); H01L 29/775 (2006.01); C30B 29/40 (2006.01); C30B 23/02 (2006.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); C30B 23/02 (2013.01); C30B 29/40 (2013.01); H01L 21/02636 (2013.01); H01L 21/441 (2013.01); H01L 21/76224 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/12 (2013.01); H01L 29/24 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01); H01L 29/7827 (2013.01); H01L 29/66439 (2013.01);
Abstract
A vertical channel transistor comprising: a structure made of a given bismuth-based material which passes through a gate block where the structure comprises a channel region which extends through the gate block and source and drain regions on either side of the channel region and of the gate block, where the source and drain regions have a cross-section which is greater than the cross-section of the channel region ().