The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Nov. 30, 2017
Applicant:
United Monolithic Semiconductors Gmbh, Ulm, DE;
Inventor:
Dag Behammer, Ulm, DE;
Assignee:
United Monolithic Semiconductors GmbH, Ulm, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/0217 (2013.01); H01L 21/0274 (2013.01); H01L 21/02164 (2013.01); H01L 21/31111 (2013.01); H01L 22/26 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/42316 (2013.01); H01L 29/7787 (2013.01);
Abstract
A method produces a transistor, in particular a gallium nitride transistor based on high electron mobility. After a structured metal layer has been formed in a first gate region by a temporarily formed structured first photoresist layer, an intermediate layer has been deposited and a second insulation layer has been deposited, a second photoresist layer is structured in order to expose a second gate region, wherein subsequently a first field plate and a second field plate are formed as buried field plates on respective sides of the second gate region.