The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jun. 07, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); G11C 11/22 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); G11C 11/223 (2013.01); H01L 29/4966 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/66689 (2013.01); H01L 29/7816 (2013.01); H01L 29/78391 (2014.09);
Abstract
A Field-Effect Transistor (FET) with a negative capacitance layer to increase power density provides a negative capacitor connected in series with a conventional positive capacitor. The dimensions of the negative capacitor are controlled to allow the difference in capacitances between the negative capacitor and the positive capacitor to approach zero, which in turn provides a large total capacitance. The large total capacitance provides for increased power density.