The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Apr. 12, 2018
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Boe Display Technology Co., Ltd., Anhui, CN;

Inventors:

Maomao Fang, Beijing, CN;

Youngjin Song, Beijing, KR;

Ziheng Yang, Beijing, CN;

Shifei Shen, Beijing, CN;

Dengtao Li, Beijing, CN;

Shengrong Li, Beijing, CN;

Yishen Wang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1333 (2006.01); H01L 27/12 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/1337 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 1/136227 (2013.01); G02F 1/136286 (2013.01); H01L 27/1214 (2013.01); G02F 1/133711 (2013.01); G02F 2001/13625 (2013.01); G02F 2001/133792 (2013.01); G02F 2001/136231 (2013.01); G02F 2001/136236 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01);
Abstract

An array substrate and a manufacturing method thereof are disclosed. The manufacturing method includes forming, on a substrate, a first metal pattern layer, a first insulating layer, a second metal pattern layer, and a second insulating layer, successively; coating a photoresist on the second insulating layer; forming a photoresist pattern and an etching protection layer, in a first region of the array substrate, the photoresist pattern exposing a part of the top surface of the second insulating layer, and being coupled to the second insulating layer through the etching protection layer; and performing etching in the first region by using the photoresist pattern as a mask to remove the etching protection layer and at least part of the second insulating layer, without etching the first insulating layer, so as to expose a part of the second metal pattern layer and form a liquid crystal diversion groove.


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