The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Apr. 16, 2019
Applicant:
Japan Display Inc., Tokyo, JP;
Inventors:
Assignee:
Japan Display Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G06F 3/046 (2006.01); G06F 3/041 (2006.01); G02F 1/1333 (2006.01); G02F 1/1339 (2006.01); G02F 1/1345 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G06F 3/044 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1339 (2013.01); G02F 1/1368 (2013.01); G02F 1/13338 (2013.01); G02F 1/13452 (2013.01); G02F 1/136286 (2013.01); G06F 3/044 (2013.01); G06F 3/046 (2013.01); G06F 3/0412 (2013.01); G06F 3/0416 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1266 (2013.01); G06F 2203/04102 (2013.01); G06F 2203/04103 (2013.01); G06F 2203/04111 (2013.01);
Abstract
A semiconductor device includes a first resin layer, one or more first wirings above the first resin layer, a second resin layer above the first wiring, the second resin layer including a first opening part, a transistor above the second resin layer, the transistor including a semiconductor layer, a gate insulation layer, and a gate electrode layer; and a second wiring above the second resin layer, the second wiring being connected to the transistor and connected to the first wiring via the first opening part.