The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Nov. 20, 2018
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;
Chen Chen, Wuhan, CN;
Abstract
The present disclosure proposes a method of producing an LTPS TFT array substrate. The method is about stacking of a gate insulating layer and an interlayer insulating layer for providing conditions for formation of a gate trench. In addition, stacking of the gate insulating layer and the interlayer insulating layer is produced with some blocks of forming a hole on the gate insulating layer and the interlayer insulating layer to form a hole pattern, filling the gate trench, and producing gate lines. In this way, the formation of the gate lines and the formation of the hole pattern on the gate insulating layer and the interlayer insulating layer are done using the same mask. The method of the present disclosure reduces the number of masks required compared with the method of the related art, thereby reducing the production costs.