The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Feb. 14, 2017
Applicant:

Glo Ab, Lund, SE;

Inventors:

Anusha Pokhriyal, Sunnyvale, CA (US);

Sharon N. Farrens, Boise, ID (US);

Timothy Gallagher, Pleasanton, CA (US);

Assignee:

GLO AB, Lund, SE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 25/16 (2006.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 23/00 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/67144 (2013.01); H01L 21/6835 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 25/167 (2013.01); H01L 33/005 (2013.01); H01L 33/62 (2013.01); H01L 25/0753 (2013.01); H01L 2221/68322 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68354 (2013.01); H01L 2221/68368 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/81224 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83224 (2013.01); H01L 2224/83815 (2013.01); H01L 2933/0066 (2013.01);
Abstract

Selective transfer of dies including semiconductor devices to a target substrate can be performed employing local laser irradiation. Coining of at least one set of solder material portions can be employed to provide a planar surface-to-surface contact and to facilitate bonding of adjoining pairs of bond structures. Laser irradiation on the solder material portions can be employed to sequentially bond selected pairs of mated bonding structures, while preventing bonding of devices not to be transferred to the target substrate. Additional laser irradiation can be employed to selectively detach bonded devices, while not detaching devices that are not bonded to the target substrate. The transferred devices can be pressed against the target substrate during a second reflow process so that the top surfaces of the transferred devices can be coplanar. Wetting layers of different sizes can be employed to provide a trapezoidal vertical cross-sectional profile for reflowed solder material portions.


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