The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Mar. 25, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Bu-won Kim, Yongin-si, KR;

Dae-ho Lee, Hwaseong-si, KR;

Hee-jin Lee, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/498 (2006.01); H01L 25/18 (2006.01); H01L 21/48 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49866 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 25/0655 (2013.01); H01L 25/18 (2013.01); H01L 24/48 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48228 (2013.01); H01L 2924/1515 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15747 (2013.01);
Abstract

A semiconductor package includes a circuit pattern extending in a horizontal direction. The circuit pattern is conductive. A first insulation layer is disposed on the circuit pattern. A semiconductor chip is disposed on the first insulation layer. The first insulation layer includes first protrusions which protrude from a bottom surface of the first insulation layer, penetrate through at least a portion of the circuit pattern, and have a mesh structure. A second protrusion protrudes from the bottom surface of the first insulation layer and penetrates at least a portion of the circuit pattern. The second protrusion is spaced apart from the semiconductor chip in the horizontal direction. The second protrusion has a width in the horizontal direction wider than that of each of the first protrusions.


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