The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jan. 24, 2017
Shindengen Electric Manufacturing Co., Ltd., Chiyoda-ku, Tokyo, JP;
Nobuki Miyakoshi, Saitama, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes in a following order: a first forming step where a gate electrode is formed on a first main surface side of a semiconductor base substrate with a gate insulation film interposed therebetween and, thereafter, an interlayer insulation film is formed to cover the gate electrode; a second forming step where a metal layer in a state of being connected with the gate electrode is formed over the interlayer insulation film; an irradiating step where a lattice defect is formed inside the semiconductor base substrate by irradiating an electron beam to the semiconductor base substrate in a state where the metal layer is set to a ground potential; a dividing step where the metal layer is divided into a plurality of electrodes; and an annealing step where the lattice defect in the semiconductor base substrate is repaired by heating the semiconductor base substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile