The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jul. 14, 2017
Applicant:
Anvil Semiconductors Limited, Warwickshire, GB;
Inventor:
Peter Ward, Cambridgeshire, GB;
Assignee:
ANVIL SEMICONDUCTORS LIMITED, Warwickshire, GB;
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); H01L 21/02 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); C30B 25/02 (2006.01); C30B 29/06 (2006.01); C30B 29/36 (2006.01); H01L 29/34 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 29/06 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 29/0834 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/861 (2013.01);
Abstract
We describe a method for reducing bow in a composite wafer comprising a silicon wafer and a silicon carbide layer grown on the silicon wafer. The method includes applying nitrogen atoms during the growth process of the silicon carbide layer on the silicon wafer so as to generate a compressive stress within the composite wafer.