The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Mar. 23, 2018
Applicant:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Inventors:
Tomoo Nakayama, Ibaraki, JP;
Tatsuya Usami, Ibaraki, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/266 (2013.01); H01L 21/2652 (2013.01); H01L 21/32139 (2013.01); H01L 21/823814 (2013.01); H01L 29/66477 (2013.01);
Abstract
The reliability of a semiconductor device is improved. A photoresist pattern is formed over a semiconductor substrate. Then, over the semiconductor substrate, a protective film is formed in such a manner as to cover the photoresist pattern. Then, with the photoresist pattern covered with the protective film, an impurity is ion implanted into the semiconductor substrate. Thereafter, the protective film is removed by wet etching, and then, the photoresist pattern is removed.