The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10714303 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 14, 2020

Filed:

Jul. 19, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Brent A. Wacaser, Putnam Valley, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Stephen W. Bedell, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/00 (2006.01); H01J 37/147 (2006.01); G01N 23/207 (2018.01);
U.S. Cl.
CPC ...
H01J 37/1478 (2013.01); G01N 23/207 (2013.01); G01N 2223/401 (2013.01); G01N 2223/418 (2013.01); H01J 2237/1506 (2013.01);
Abstract

Techniques for high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy are provided. In one aspect, a method for ECCI of a crystalline wafer includes: placing the crystalline wafer under an electron microscope having an angle of less than 90° relative to a surface of the crystalline wafer; generating an electron beam, by the electron microscope, incident on the crystalline wafer; varying an accelerating voltage of the electron microscope to access a channeling condition of the crystalline wafer; and obtaining an image of the crystalline wafer. A system for ECCI is also provided.


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