The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Aug. 30, 2017
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Shigehiko Mori, Kawasaki, JP;

Takeshi Gotanda, Yokohama, JP;

Haruhi Oooka, Kawasaki, JP;

Kenji Todori, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/20 (2006.01); H01L 51/00 (2006.01); H01G 9/00 (2006.01); H01L 51/44 (2006.01); H01L 51/42 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01G 9/2031 (2013.01); H01G 9/0029 (2013.01); H01L 51/004 (2013.01); H01L 51/0034 (2013.01); H01L 51/0035 (2013.01); H01L 51/0037 (2013.01); H01L 51/0076 (2013.01); H01L 51/0096 (2013.01); H01L 51/442 (2013.01); H01L 51/0047 (2013.01); H01L 51/4226 (2013.01); H01L 51/4246 (2013.01); H01L 51/4253 (2013.01); H01L 51/5206 (2013.01); H01L 2251/308 (2013.01); Y02E 10/549 (2013.01);
Abstract

The present embodiments provide a flexible, lightweight and highly efficient photoelectric conversion device and further provide a manufacturing method thereof. The photoelectric conversion device according to the embodiment comprises a laminate structure of a substrate, an ITO electrode, a photoelectric conversion layer and a counter electrode. When subjected to surface X-ray diffraction analysis, the ITO electrode shows an X-ray diffraction profile characterized in that the peak at a diffraction peak position in the range of 2θ=30.6±0.5° has a half-width of 1.0° or less. The ITO electrode in the device can be formed by forming an amorphous-phase ITO film on the substrate and then by subjecting the film to annealing treatment at a temperature of 200° or less.


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