The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jun. 25, 2019
Sandisk Technologies Llc, Addison, TX (US);
Steve Fang, San Jose, CA (US);
Xiaofeng Zhang, San Jose, CA (US);
SanDisk Technologies LLC, Addison, TX (US);
Abstract
Detecting a word line leakage in a non-volatile memory array. Various methods include: in a first step, enabling a M-bit 'coarse' digital-to-analog converter (DAC) logic of an N-bit analog-to-digital converter (ADC) to, according to a clock signal of the coarse DAC, compare a reference voltage and a biased input voltage of a load current of the memory array, wherein the reference voltage is dependent upon the voltage level at which the input voltage becomes non-linear, and, in a second step, if the input voltage is greater than or equal to the reference voltage, enabling a P-bit 'fine' ramp digital-to-analog converter (DAC) logic of the ADC to enable drawing a second current from the load current to ramp down the input voltage and to begin a counter and conduct leakage detection with the ADC when the input voltage is in the range between a first voltage and a second voltage.