The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jan. 25, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Sung-Min Joe, Seoul, KR;

Kang-Bin Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 11/4091 (2006.01); G11C 16/08 (2006.01); G11C 8/14 (2006.01); G11C 16/26 (2006.01); G11C 7/12 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 7/12 (2013.01); G11C 8/14 (2013.01); G11C 11/4091 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01);
Abstract

A method of operating a memory device includes performing a first program operation on memory cells connected to a first word line among a plurality of word lines, performing the first program operation on memory cells connected to a second word line among the plurality of word lines, applying a turn-on voltage at a first level to the first and second word lines, applying a voltage at a level lower than the first level to a third word line among the plurality of word lines, performing a precharge operation on partial cell strings among a plurality of cell strings, and performing a second program operation on the memory cells connected to the first word line.


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