The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Sep. 26, 2018
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andreas Kiep, Munich, DE;

Holger Ruething, Munich, DE;

Frank Wolter, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
G01K 7/01 (2013.01); H01L 27/0664 (2013.01); H01L 27/0629 (2013.01);
Abstract

A semiconductor die includes a single power transistor or power diode, a temperature sense diode formed close enough to the single power transistor or power diode to measure an accurate temperature. The temperature sense diode comprises first and second diodes or strings of diodes. A separate integrated circuit is operable to measure first and second voltage drops of both the first and second diodes or strings of diodes using same magnitude currents, and estimate the temperature of the single power transistor or power diode based on the difference between the first and second forward voltage drop measurements. An overall pn junction area of the first diode or string of first diodes is different from an overall pn junction area of the second diode or string of second diodes.


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