The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jul. 18, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Juergen Zimmer, Neubiberg, DE;

Klemens Pruegl, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01D 5/16 (2006.01); G01R 33/09 (2006.01); G01R 33/02 (2006.01); G01B 7/30 (2006.01); H04L 12/877 (2013.01); H04L 12/911 (2013.01); H04L 12/927 (2013.01); H04L 12/863 (2013.01);
U.S. Cl.
CPC ...
G01D 5/16 (2013.01); G01B 7/30 (2013.01); G01R 33/02 (2013.01); G01R 33/09 (2013.01); G01R 33/093 (2013.01); G01R 33/096 (2013.01); H04L 47/525 (2013.01); H04L 47/72 (2013.01); H04L 47/781 (2013.01); H04L 47/805 (2013.01); H04L 47/6215 (2013.01);
Abstract

Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.


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