The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Apr. 17, 2018
Applicants:

Tsinghua University, Beijing, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Peng Lei, Beijing, CN;

Peng Liu, Beijing, CN;

Kai-Li Jiang, Beijing, CN;

Shou-Shan Fan, Beijing, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 29/60 (2006.01); C30B 29/02 (2006.01); C30B 29/38 (2006.01); C23C 16/50 (2006.01); C30B 25/16 (2006.01); C23C 16/26 (2006.01); C23C 16/34 (2006.01); C23C 16/46 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
C30B 25/10 (2013.01); C23C 16/26 (2013.01); C23C 16/342 (2013.01); C23C 16/458 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); C30B 25/105 (2013.01); C30B 25/16 (2013.01); C30B 25/18 (2013.01); C30B 29/02 (2013.01); C30B 29/38 (2013.01); C30B 29/602 (2013.01);
Abstract

An epitaxial growing device to increase the speed of epitaxial deposition comprises a cavity comprising a reaction chamber, a gas supply unit, a vacuum pumping unit, a first electrode, a second electrode, and a carbon nanotube structure. A gas supply unit and the vacuum pumping unit are connected to the reaction chamber, the first electrode, the second electrode, and the carbon nanotube structure being located in the reaction chamber. The carbon nanotube structure is electrically connected to the first electrode and the second electrode and suspended through the first electrode and the second electrode and is heatable in itself. A method for growing an epitaxial layer using such device is also provided.


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