The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Oct. 05, 2016
Applicant:
Sumco Corporation, Tokyo, JP;
Inventor:
Tegi Kim, Tokyo, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/14 (2006.01); C30B 29/06 (2006.01); C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
C30B 15/14 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01);
Abstract
A manufacturing method of monocrystalline silicon includes: melting silicon housed in a quartz crucible into a silicon melt by heating the quartz crucible with a heating unit; dipping a seed crystal into the silicon melt in the quartz crucible to bring the seed crystal into contact with the silicon melt; and pulling up the seed crystal to grow monocrystalline silicon. In the pulling-up, a formation of a straight body of the monocrystalline silicon is started at a power consumption of the heating unit being equal to or more than 10000 kWh to grow an entirety of the monocrystalline silicon.