The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Sep. 21, 2017
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

Stephanie J. Lin, Redondo Beach, CA (US);

James R. Chow, San Gabriel, CA (US);

Kalin Spariosu, Thousand Oaks, CA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/66 (2006.01); H01L 33/50 (2010.01); F21K 9/64 (2016.01); F21V 7/22 (2018.01); C09K 11/54 (2006.01); C09K 11/88 (2006.01); C09K 11/02 (2006.01); C01B 17/20 (2006.01); C01B 19/00 (2006.01); C09K 11/56 (2006.01); C01G 21/21 (2006.01); H01L 31/0352 (2006.01); B82Y 20/00 (2011.01); F21Y 115/10 (2016.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/662 (2013.01); C01B 17/20 (2013.01); C01B 19/007 (2013.01); C01G 21/21 (2013.01); C09K 11/025 (2013.01); C09K 11/54 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); F21K 9/64 (2016.08); F21V 7/22 (2013.01); H01L 31/035218 (2013.01); H01L 33/502 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2002/84 (2013.01); C01P 2004/64 (2013.01); C01P 2004/84 (2013.01); C01P 2006/60 (2013.01); F21Y 2115/10 (2016.08); H01L 2933/0041 (2013.01); Y10S 977/774 (2013.01); Y10S 977/825 (2013.01); Y10S 977/892 (2013.01); Y10S 977/95 (2013.01);
Abstract

In certain embodiments, a first semiconductor material is vaporized to generate a vapor phase condensate. The vapor phase condensate is allowed to form nanoparticles. The nanoparticles are annealed to yield nanoparticles or cores. The cores are overcoated by introducing a solution containing second semiconductor material precursors in a coordinating solvent into a suspension of cores at a desired elevated temperature and mixing for a period of time sufficient to cause diffusion of the shell into the core. The diffusion of the shell into the core causes the quantum dots to exhibit a broadened optical emission. The produced quantum dots may be incorporated into a quantum dot based radiation source.


Find Patent Forward Citations

Loading…