The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jun. 20, 2017
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;

Inventor:

Minghui Li, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 37/00 (2006.01); B32B 3/10 (2006.01); B32B 15/08 (2006.01); G02B 5/30 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
B32B 37/025 (2013.01); B32B 3/10 (2013.01); B32B 15/08 (2013.01); G02B 5/3058 (2013.01); G03F 7/0002 (2013.01); B32B 2250/02 (2013.01); B32B 2307/42 (2013.01);
Abstract

The present invention provides a nanometer wire grid structure fabrication method. The method first uses an imprinting mold to subject a thermoplastic base plate to hot pressing so as to form a plurality of recesses and a plurality of projections that are alternate with each other thereon, and then forms a metal film on the plurality of recesses and the plurality of projections, then uses a metal bonding adhesive material to transfer portions of the metal film located on the projections to a wire grid carrier board, and finally peeling off the thermoplastic base plate to obtain a nanometer wire grid structure, and compared to the prior art, the entire process is conducted in a manner of being free of photoresist coating, photoresist residue, and metal etching, so as to avoid problems of fabrication of the prior art caused by poor etching accuracy, difficulty of photoresist residue removal, and wire grid collapsing during etching operation and help simplify the fabrication process of a nanometer wire grid structure, shorten fabrication time of the nanometer wire grid structure, and improve fabrication efficiency and process yield of the nanometer wire grid structure.


Find Patent Forward Citations

Li, Minghui. (2020). Nanometer wire grid structure fabrication method (U.S. Patent No. 10710350). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10710350

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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