The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Apr. 29, 2018
Applicant:

Technion Research & Development Foundation Limited, Haifa, IL;

Inventors:

Shahar Kvatinsky, Ramat-Gan, IL;

Leonid Azriel, Haifa, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04L 9/06 (2006.01); G11C 13/00 (2006.01); H04L 9/32 (2006.01);
U.S. Cl.
CPC ...
H04L 9/0643 (2013.01); G11C 13/004 (2013.01); H04L 9/3242 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0042 (2013.01);
Abstract

Apparatus and method for hashing a message, comprises using an array of individually selectable memristor cells. The memristor cells are subject to write disturb that affects cells neighboring a selected cell so that a write operation into one cell has a knock-on effect on the neighbors. The array is initiated into a known stable state so that these changes to neighboring cells are predictable according to proximity to the currently selected cell. An inserter sequentially mixes bits with the hash so far to insert bits into successively selected cells of the memristor array and forms a succession of memristor array states including the knock on effects on the neighboring cells. A final resulting memristor array state following input of the bits forms the hash of the message.


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