The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Aug. 29, 2019
Applicant:

Lontium Semiconductor Corporation, Hefei, Anhui, CN;

Inventors:

Jiaxi Fu, Anhui, CN;

Cheng Tao, Anhui, CN;

Xiangyu Ji, Anhui, CN;

Feng Chen, Anhui, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/153 (2006.01); H03K 17/22 (2006.01);
U.S. Cl.
CPC ...
H03K 17/223 (2013.01);
Abstract

A power-on reset circuit is provided. During a power-on process of the power-on reset circuit, a threshold voltage of an output signal rstn jumping from a low level to a high level is adjusted by clamp of a voltage at a node c and voltage division between a first resistor and a second resistor, and is controlled to be greater than a threshold voltage of a metal oxide semiconductor device. During a power-off process of the power-on reset circuit, a threshold voltage of the output signal rstn jumping from the high level to the low level is adjusted by increasing a voltage at a node d by means of a third resistor and voltage division between the first resistor and the third resistor, and is controlled to be greater than the threshold voltage of the metal oxide semiconductor device.


Find Patent Forward Citations

Loading…